Offers Enhanced Efficiency, Reliability and Flexibility for PFC and DC-DC SSTs applications
July 14, 2026, Shanghai, China – WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power semiconductor products, has launched a new family of cutting-edge AC-DC and DC-DC SiC power modules to target the growing range of solid-state transformer (SST) applications, as well as EV super chargers and smart-grid/renewable applications.
SSTs offer conversion efficiencies in the region of 98%, and over 20 high-efficiency, high-reliability modules have been developed at time of launch. These are available in an array of packages and with voltages ranging from 1200 to 2300 V, RDS(on) values as low as 1.5 mΩ and customer-specific configurations can also be created.
Module configurations have been created to cater for a huge array of SST applications, including grid PFC for the latest generation of AI racks, enabling conversion from 35 kVAC to 800 VDC in a single stage. supply the. This includes 3-level topology modules for enhanced EMI performance (e.g. WMSC5R0N17B3T), and 2-level devices, for easier control and smaller footprints (e.g. WMSC5R0F23B3T).
Similarly, a wide range of half bridge modules for LLC/DAB primary and secondary applications have also been announced with packaging options that include B2, B3 and 62 mm screw mount housing.
All modules in the family offer low inductance and have been developed with both design flexibility and layout simplicity in mind. They feature a pin order that both leaves space for the gate driving circuit while also considering device integration and electrical safety.
A range of options for the modules is also available, including for the direct bonded copper, case, and silicon-gel material, as well as the mount, pin type, plating and thermal-interface material pre-application service. These are available via the company’s collaborative custom design team.
Kevin Shen, President of WeEn Semiconductors, said: “We’ve launched the new WMSC modules cover roughly 90% of all SST applications and these are also ideally suited to the smart grid, renewables and other high-voltage systems. They are a significant breakthrough for the industry and offer higher switching speeds and higher breakdown voltages, which in turn allows for direct connection to the medium-voltage grid as well as reduced magnetics, higher efficiencies and simplified cooling.”
All modules are available for sampling and in production quantities. For further information on these modules, as well as on WeEn’s high-voltage (up to 2300 V) SiC power ICs and its collaborative custom design offering, please visit ween-semi.com.
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Device
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Breakdown Voltage
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RDS(on)
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Application
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INPC modules include
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WMSC5R0N17B3T
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1700 V
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5.0 mΩ
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Multi-purpose half-bridge B3 modules include
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WMSC5R0HS23B3T
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2300 V
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AC side
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WMSC5R0F23B3T
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2300 V
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AC side, LLC/DAB Primary
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WMSC3R0F15B3T
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1500 V
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LLC/DAB Primary
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WMSC3R0F12B3T
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1200 V
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LLC/DAB Secondary
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WMSC2R4F12B3T
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1200 V
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LLC/DAB Secondary
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Half-bridge B2 Modules include
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WMSC4R0H23B2N
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2300 V
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4.0 mΩ
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LLC/DAB Secondary
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WMSC4R8H23B2N-D
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2300 V
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4.8 mΩ
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LLC/DAB Secondary
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WMSC6R0H12B2N-D
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2300 V
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6.0 mΩ
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LLC/DAB Secondary
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Half-bridge 62 mm module (screw mount) include
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WMSC2R7H23T2
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2300 V
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2.7 mΩ
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AC side
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WMSC2R7H17T2N-D
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1700 V
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2.7 mΩ
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LLC/DAB Primary
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WMSC7R5H17T2N-D
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1700 V
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7.5 mΩ
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LLC/DAB Secondary
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WMSC1R9H12T2
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1200 V
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1.9 mΩ
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LLC/DAB Secondary
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WMSC1R9H12T2N
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1200 V
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1.9 mΩ
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LLC/DAB Secondary
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High-power half-bridge modules (PCB mount) include
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WMSC1R5H12B3S
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1200 V
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1.5 mΩ
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LLC/DAB Secondary
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WMSC2R3H12B3S
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1200 V
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2.3 mΩ
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LLC/DAB Secondary
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WMSC4R0H12B2S
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1200 V
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4.0 mΩ
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LLC/DAB Secondary
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WMSC4R0H12B2S-D
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1200 V
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4.0 mΩ
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LLC/DAB Secondary
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WMSC4R0H12B2T-D
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1200 V
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4.0 mΩ
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LLC/DAB Secondary
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