WIN Semiconductors has announced that it is enabling fully integrated single chip solutions for 5G front end modules with its PIH1-10 advanced GaAs platform. The PIH1-10 process integrates monolithic PIN diodes, capable of power switching through 50GHz, into an advanced 100GHz ft pseudomorphic HEMT platform.
The technology is said to provides users with multiple pathways to add on-chip functionality and higher integration. In addition to monolithic PIN diodes and high performance pHEMT devices, the PIH1-10 platform offers linear Schottky diodes for mixers or detectors, as well as enhancement and depletion transistors optimised for logic functionality and bias controls.
When combined with RF isolated through-wafer-vias, this humidity resistant technology enables a wafer level package option for compact chip integration in MIMO functions where available board space is limited.
“The PIH-10 technology leverages WIN’s qualified production techniques and industry leading manufacturing scale to provide a new platform that can be extended and optimised to address rapidly evolving market requirements,” said David Danzilio, senior VP of WIN Semiconductors.
“Compound semiconductors, and particularly GaAs, remain the technology of choice for demanding amplifier functions from 500MHz through 100GHz and above. This advantage comes from higher gain, linearity and power added efficiency provided by GaAs devices as compared to RF CMOS or SiGe. This performance advantage will be critical in the 28-40GHz bands envisioned for 5G where gain and efficiency at 6-10dB back-off will determine system-level performance.
He added: “WIN’s GaAs pseudomorphic HEMT is the foundation for many of todays high performance amplifiers operating in the 20GHz to 100GHz range, and incorporating low loss PIN switch functionality enables our customers to field unique single chip 5G solutions without sacrificing performance.”
WIN Semiconductors will be showcasing its compound semiconductor RF and mm-Wave solutions at the 2017 European Microwave Week in Nurnberg, Germany being held October 8-13, 2017