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Industry-Leading 100V PowerDI®8080-5 Packaged MOSFET from Diodes Incorporated Provides Low RDS(ON) to Deliver High-Efficiency Designs in 48V Automotive Systems

Semiconductor For You by Semiconductor For You
March 25, 2026
in Semiconductor News
0

Plano, Texas – March 25, 2026 – Diodes Incorporated (Diodes) (Nasdaq: DIOD) expands its PowerDI8080-5 automotive-compliant* N-channel MOSFET portfolio with the introduction of an industry-leading, ultra-low RDS(ON), 100V MOSFET. Introduced alongside new 40V to 80V MOSFETs, all of the 8mm x 8mm gullwing-leaded devices are designed to minimize conduction losses, reduce heat generation, and maximize overall efficiency. Applications include brushless DC (BLDC) motors and DC-DC conversion systems in battery electric vehicles (BEVs), hybrid electric vehicles (HEVs), and internal combustion engine (ICE) platforms.

Engineers can leverage the 1.5mΩ (max.) RDS(ON) of the 100V-rated DMTH10H1M7SPGWQ in 48V BLDC motor drives used in power steering and braking systems. Other high-power applications include battery disconnect switches and on-board chargers (OBC). Designers can also choose from the 80V-rated DMTH81M2SPGWQ.

The 40V-rated DMTH4M40SPGWQ features a maximum RDS(ON) of 0.4mΩ, one of the lowest in the industry, suitable for 12V BLDC motors and DC-DC applications. The 40V-rated logic MOSFET DMTH4M40LPGWQ offers a low RDS(ON) of 0.64mΩ at a gate-source voltage (VGS) of 4.5V for low-voltage, microcontroller-driven automotive applications, such as actuators/fan controls and load switches, without sacrificing on-state losses. The 60V-rated DMTH6M70SPGWQ offers high performance for 24V applications.

The PowerDI8080-5 package has a PCB footprint of just 64mm², approximately 40% of the area occupied by the legacy TO-263 (D2PAK) package, alongside an off-board profile of 1.7mm, making it ideal for small-footprint applications. Furthermore, copper clip die bonding reduces the thermal resistance (RthJC) to as low as 0.3°C/W, which enables drain currents as high as 847A without risk of damage. The gullwing lead configuration facilitates automated optical inspection (AOI) and enhances temperature cycling reliability, supporting robust automotive manufacturing processes.

The PowerDI8080-5 N-channel MOSFETs are priced in 5,000 piece quantities as follows:

DMTH10H1M7SPGWQ: $1.71

DMTH81M2SPGWQ: $1.89

DMTH4M40SPGWQ: $1.65

DMTH4M40LPGWQ: $1.65

DMTH6M70SPGWQ: $1.82

DMTH4M72SPGWQ: $1.11

Standard-compliance versions are also available and are suitable for industrial and commercial applications.

 

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Industry-Leading 100V PowerDI®8080-5 Packaged MOSFET from Diodes Incorporated Provides Low RDS(ON) to Deliver High-Efficiency Designs in 48V Automotive Systems

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March 25, 2026
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