See the QSiC™Gen3 line, now offering high-thermal-performance options featuring AlN substrates and pre-applied TIM, on display at Booth #110 in Hall 4A
June 4, 2026, Lake Forest, CA – SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, will debut its latest SiC module advances – including an expansion of its QSiC™ Dual3 MOSFET family, now offering high-thermal-performance options featuring AlN (Aluminum Nitride) substrates and pre-applied TIM (thermal interface material) – at PCIM 2026, taking place from June 9 to 11 at Messe Nürnberg in Nuremberg, Germany.
With a flexible design and industry-leading power density, the new lineup has been designed to meet the rising power and thermal demands of AI-driven datacenters, high-power industrial, solar PV and EV applications, and will be on display at Alfatec’s stand (Hall 4A, Booth #110) throughout the show.
Product Highlights
Visitors to the SemiQ stand will be able to see the company’s latest QSiC™ Gen3 SiC modules, which feature a 30% reduction in specific on-resistance (RONsp) and turn off energy losses (EOFF) versus its previous generations. These modules significantly reduce cooling complexity and switching losses for EV charging stations, energy storage systems, and industrial motor drives.
With additional showcased advances including:
- QSiC Dual3 Modules: This family of 1200 V half-bridge MOSFET modules enables the creation of power converters with industry-leading conversion efficiency and power density – and its latest expansion now offers high-thermal-performance options featuring AlN substrates and pre-applied TIM.
- S3 Modules: This family includes a 608 A half-bridge module with an ultra-low 2.4 mΩ RDSon and a junction-to-case thermal resistance (RθJC) of just 0.07ºC/W.
- SOT-227 Modules: Featuring five modules with RDSon values of 7.4, 14.5, and 34 mΩ, optimized for server power supplies, battery chargers, and PV inverters.
- B2T1 Six-Pack Modules: Spanning an RDSon range of 19.5 to 82 mΩ designed to minimize parasitics in motor drives and advanced AC-DC converters.
- B3 Full-Bridge Modules: Delivering up to 120 A with RDSon as low as 8.6 mΩ. These modules maximize power density for high-voltage DC-DC systems.
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President at SemiQ. “By improving efficiency and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
To find out more, please visit semiq.com or meet us in person at the show, Booth #110 in Hall 4A.
Download datasheets for SemiQ’s MOSFET modules here.
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