Forward biasing of p-n junction diode

Positive terminal of the battery is connected to the P-crystal and negative terminal of the battery is connected to N-crystal.

• In forward biasing width of depletion layer decreases
• In forward biasing resistance offered R_forward » 10ohm-25ohm
• forward bias opposes the potential barrier and for V> V_B a forward current is set up
  across the junction.
• The current is given by i-i_s(e^eV/kT -1); where i_s = Saturation current, e = 1.6 ´10^-19 C, k =Boltzmann’s constant.
• Cut-in (Knee) voltage : The voltage at which the current starts to increase rapidilv. For Ge it is 0.3 V and for Si it is 0.7 V.