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Home Semiconductor News

EasyPACK™ CoolSiC™ MOSFET module supports fast-switching DC-link voltage of 1500 V for solar systems and ESS applications

Semiconductor For You by Semiconductor For You
June 11, 2021
in Semiconductor News
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Munich, Germany – 28 April 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a new EasyPACK™ 2B module in the company’s 1200 V family. The module comes in 3-level Active NPC (ANPC) topology and integrates CoolSiC™ MOSFETs, TRENCHSTOP™ IGBT7 devices, and an NTC temperature sensor along with PressFIT contact technology pins. The power module is suitable for fast-switching applications like energy storage systems (ESS). The module also increases the power rating and efficiency of solar systems and supports the growing demand for 1500 V DC-link solar applications.

Using the latest CoolSiC MOSFET and TRENCHSTOP IGBT7 technology combined with an increased diode rating, the Easy module F3L11MR12W2M1_B74 is designed to operate over the entire power factor (cos φ) range. A single module per phase is capable of supplying a power level of up to 75 kW in energy storage applications. For solar applications a power level of up to 150 kW can be reached by operating two modules in parallel per phase.

With its improved pin positioning, the module also ensures short and clean commutation loops with reduced stray module inductances. Its optimized layout enables excellent thermal conduction of the CoolSiC MOSFET chips within the EasyPACK 2B package. In addition, the power module supports easy design-in and provides a high degree of freedom for inverter design.

Availability

The EasyPACK CoolSiC MOSFET module F3L11MR12W2M1_B74 is now available. More information is available at www.infineon.com/easy. The product will be showcased at Infineon’s Virtual Power Conference, which complements “PCIM Europe digital days.”

Infineon’s Virtual Power Conference 2021

Experience the difference in Power – Power semiconductors are the key to an energy-efficient world. New technologies such as silicon carbide (SiC) and gallium nitride (GaN) enable higher power efficiency, smaller form factors and lower weight. Silicon also plays a major role in many designs. Energy efficiency is the focus of the “Virtual Power Conference,” which will be available ‘live’ from May 4 to 6, 2021. As a leading supplier of power semiconductors, Infineon will use the exclusive digital platform to present technologies and systems that generate energy more efficiently, transmit and distribute with lower losses, and showcase a wide range of energy-efficient applications. Focus areas comprise the verticals Industry, Transport & e-Mobility and Consumer.

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