DMSO-based, single wafer spin process offers safety for workers, environment and equipment  AP&S has announced that it has adapted its...

Junction Barrier Schottky family brings SiC benefits to wide range of applications STMicroelectronics has announced a full range of 2A-40A...

Joint development partnership establishes 200mm, fully CMOS-compatible process X-Fab Silicon Foundries and Exagan, a GaN start-up, have demonstrated mass-production capability...

300,000 square foot facility adds electronic and optoelectronic compound semiconductor devices to portfolio   Kaiam, a US maker of datacentre transceivers,...

Ilan Daskal brings 25 years experience in operations, mergers and acquisitions LED company Lumileds has appointed Ilan Daskal as its chief...

Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched its SKY13698-694LF ultra-low-loss double-pole double-throw...

STMicroelectronics of Geneva, Switzerland has lauched a full range of 2-40A 1200V silicon carbide (SiC) JBS (junction barrier Schottky) diodes...

o provide design engineers with a platform to demonstrate the performance of gallium nitride high-electron-mobility transistors (HEMTs), GaN Systems Inc...

X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up enabling smaller...

Gallium nitride (GaN) technology start-up Exagan of Grenoble, France says that its founder & CEO Frédéric Dupont will be available...