Vishay Intertechnology Standard-Level 40 V MOSFETs Prevent False Triggering and Reduce Noise in Motor Control Circuits

Offered in the PowerPAK^®  SO-8 Single Package, Devices Provide High V_th(min) > 2.5 V and Q_gd / Q_gs Ratios < 1

MALVERN, Pa. — July 7, 2026 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced four new 40 V TrenchFET^® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK^® SO-8 single package. Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Q_gd / Q_gs ratios of less than 1.

The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Q_gd / Q_gs ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems.

The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mΩ to 2.5 mΩ at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % R_G– and UIS-tested, RoHS-compliant, and halogen-free.

Device Specification Table:

Samples and production quantities of the new standard-level MOSFETs are available now, with a lead time of 13 weeks.