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CGD Demonstrates Ease of Use of New, available GaN Devices at Electronica 2022

Semiconductor For You by Semiconductor For You
November 9, 2022
in Semiconductor News
0

Cambridge spin-out in mass production and scaling up innovative product range;

15-18 November, Hall C3, Booth 535, Messe München, Munich, Germany

08.11.22

Cambridge, UK – Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will participate for the first time at Electronica – Europe’s largest Electronics event – when the company will take an active part in the conference proceedings as well as show innovative GaN devices and discuss strategic partnerships.

DR, GIORGIA LONGOBARDI | CO-FOUNDER & CEO, CGD

“Sustainability and how to achieve it are key messages for the world, right now. CGD is committed to enabling sustainable power – both generation and use – through our key values of  Knowledge, Innovation and Collaboration. Electronica is the perfect platform for CGD to demonstrate our power-saving solutions, and how simple they are to implement for consumer devices and beyond.”

Prof. Florin Udrea, Founder and Chief Technology Officer (CTO) at CGD will take part in a panel discussion entitled ‘Gallium Nitride – Beyond Consumer Electronics’, moderated by Ralf Higgelke, specialist Power editor at Markt & Technik/www.elektroniknet.de/WEKA Fachmedien at 1 pm CET, November 16th, Hall C3, Stand 577.

Also speaking during the Embedded Platform Conference at the Power Electronics program which will run at the ICM within the Messe München complex, will be Dr. Nirmana Perera, Power Electronics Engineer at CGD on ‘The challenges & possibilities of GaN devices in Parallel’ (10.30 am CET, November 16th).

On booth C3.535, CGD will show industry’s first easy-to-use and scalable 650 V GaN HEMT family. The company’s ICeGaN™ H1 series are single-chip eMode HEMT devices that can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.

ICeGaN  HEMTs require no cascode structure, no complex multi-chip configurations, and no thermally-complex integrated solutions. Instead, they are a single-chip solution with embedded proprietary logic which enables the coupling with standard gate drivers or controllers.

Launched earlier this year, H1 ICeGaN  HEMTs are now available for volume production applications following a scale-up financed by two funding rounds.

Strategic partnerships are a key part of CGD’s go-to-market plans. At Electronica, the company will show two demos developed with key partners: a full 3kV photo voltaic solar inverter; and a Class D audio amplifier. The booth will also feature many demos developed by CGD, including a 65W QR flyback reference design, a 350W PFC/LLC reference design and a 3kW LLC platform.

DR, GIORGIA LONGOBARDI | CO-FOUNDER & CEO, CGD

“Power electronics is now at the centre of a global movement to improve society by turning away from old fossil-fuel-burning technologies to new energy-efficient solutions. GaN is right at the heart of this movement, so we encourage everyone to visit Electronica, and our booth, to see these innovations in action. The future of clean power is right here, right now.”

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