Researchers in the USA have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) fabricated on 200mm-diameter silicon-on-insulator (SOI) substrates with multiple...

For first-half 2017, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources...

For fiscal third-quarter 2017 (to end-June), Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has...

At the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France (24-28 July), Tokyo-based Fujitsu Ltd and Fujitsu Laboratories...

Through the US Department of Energy’s SunShot Initiative Program (which to drive down the cost of solar electricity and support...

A major bottleneck in the commercialization of micro-LED displays is the mass transfer of micron-size LEDs to a display backplane,...

There are some advantages of negative feedback amplifier which are given below. The negative feedback has less frequency distortion. It...

There are some advantages of bridge rectifier which are given below, It can be used in application allowing floating output...

Applications: There are some applications of bipolar junction transistor (BJT) which are given below. The BJT is used as an...

There are some advantages of photodiode which are given below, The photodiode has better frequency response, linearity and spectral response...