Infineon Expands Power Portfolio with New MOSFETs, Intelligent Switches, and Advanced EV Power Modules

ADVERTISEMENT

Infineon Technologies has introduced a comprehensive set of power semiconductor innovations aimed at accelerating efficiency, power density, and system scalability across automotive, industrial, and data center applications. The latest product introductions span cutting-edge MOSFET technologies, intelligent switching solutions, and high-performance power modules designed for next-generation electrification and digital infrastructure.

1. At the forefront is the OptiMOS™ 8 100 V power MOSFET, engineered to address demanding motor control and battery protection applications. Leveraging a new generation technology platform, the device delivers industry-leading low on-resistance (RDS(on)) and excellent switching behavior, translating into significantly reduced conduction losses and improved efficiency. This advancement enables higher current capability and power density, making it ideal for applications such as drives, battery management systems, and telecom power supplies. Compared to its predecessor, OptiMOS™ 5, the new generation achieves notable system cost savings while maintaining strong performance and reliability characteristics.

2. For electrified mobility, Infineon is introducing the HybridPACK™ Drive G2 Fusion power module, a compact 750 V solution optimized for traction inverters. Integrating a fusion switch that combines IGBT/diode technology with CoolSiC™ Gen2 MOSFETs, the module offers a balanced trade-off between efficiency and cost. Designed for high-current applications up to 980 A, the module features advanced sintering technology, integrated temperature sensing, and a direct-cooled PinFin baseplate for improved thermal management. These attributes support robust operation across wide temperature ranges, while simplified single-gate-drive operation facilitates faster system integration and time-to-market.

3. Targeting fast-growing AI and hyperscale infrastructure, the new OptiMOS™ 5 60 V switching-optimized MOSFETs deliver high efficiency in compact power conversion architectures. Housed in a dual-side cooled PQFN 5×6 package, the devices combine low RDS(on), reduced switching losses, and superior thermal performance, meeting the stringent transient and reliability demands of GPU and accelerator power rails. With support for high-frequency operation and junction temperatures up to 175°C, these MOSFETs enable higher power density in data center and telecom systems while simplifying thermal design and improving system efficiency.

4. Infineon is also strengthening its position in vehicle electrification with the PROFET™ + 48V automotive smart high-side switch family, designed for 48 V board nets in electric and hybrid vehicles. These devices integrate protection functions, current sensing diagnostics, and multi-channel capability into a compact footprint, supporting load currents from 1 A to 5 A. With extended operating voltage up to 60 V and ISO 26262 readiness, the switches ensure robust and safe operation in automotive environments. Their ability to handle capacitive loads and withstand short-circuit events enhances system reliability across a wide range of powertrain and body control applications.

5. Complementing this is the OptiMOS™ 7 40 V Dual SSO8 automotive MOSFET portfolio, aimed at low- to mid-power automotive systems such as seat control, pumps, and braking functions. Featuring a compact 5×6 mm² footprint with dual MOSFET channels and up to 60 A current capability, these devices offer high efficiency and design flexibility. The leadless copper-clip package minimizes parasitic inductance and resistance, improving switching performance and enabling more compact system designs, while maintaining the reliability expected from automotive-grade components.

6. Further enhancing its EV powertrain portfolio, Infineon expands the HybridPACK™ Drive G2 SiC module family with variants such as FS01M3R08A7MA2B and FS01M5R12A7MA2B, designed for scalable inverter platforms up to 300 kW. Based on CoolSiC™ Gen2 technology, these modules offer low switching losses, high power density, and improved thermal conductivity. Additional features such as integrated temperature sensing and enhanced insulation capability support reliable operation in harsh automotive environments, while enabling OEMs to standardize inverter designs across multiple vehicle platforms.

7. Rounding out the portfolio is the FZ1200R45HL4_B8 4500 V, 1200 A IGBT module, a high-voltage solution tailored for HVDC, STATCOM, and industrial drive applications. Utilizing trench field-stop IGBT technology, the module delivers low conduction losses and high robustness, enabling more compact inverter designs and improved system longevity. Its standardized housing and high-performance characteristics make it well suited for grid infrastructure and heavy industrial applications requiring reliable high-power operation.

Together, these new product introductions underline Infineon’s commitment to addressing the evolving needs of electrification, digitalization, and decarbonization. By combining advancements in silicon and silicon carbide technologies with intelligent packaging and system-level optimization, the company continues to drive innovation across automotive, industrial, and computing sectors.