- Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
- Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching speeds and lower EMI management costs.
- Developed for 3300V, 2300V, and 1200V SiC MOSFET products.
TORRANCE, CA – June 8th, 2026 — Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its new UHV‑TO‑247‑4‑ISO package, setting a new benchmark for high‑performance discrete power devices.
Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose‑built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module‑like performance in a compact discrete form factor. When compared with standard non-isolated through-hole packages, this package not only eliminates the need for external high-voltage isolation but also improves thermal and EMI performance. This expands Navitas’ packaging portfolio, including SiCPAK® power modules, QDPAK, TO‑247‑LP, and other high‑performance solutions, for more efficient, denser, scalable power systems in energy, grid, and AI data centers.
System Benefits:
- Integrated High-Voltage Isolation: By integrating an Aluminum Nitride (AlN) substrate, this package offers robust high-voltage isolation exceeding 6000 V — eliminating the need for external isolation materials and simplifying system design.
- Direct-Cooled, Reflow-Compatible Thermal Management: A high-voltage isolated, reflow-compatible thermal pad lets the package mount directly to liquid- or air-cooled heat sinks, eliminating external TIM. This reduces RTH,J-HS by up to 60%, leading to up to 150% increased power dissipation capability, improving power density, reliability, manufacturability, and overall system cost.
- Reduced Coupling Capacitance & Radiated EMI: Integrated high-voltage isolation reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, effectively minimizing common-mode noise and radiated EMI. This enables higher switching speeds and delivers improved power density, increased system efficiency, and reduced system-level costs associated with EMI mitigation.
- Superior Power and Thermal Cycling Lifetime: Built on a high-performance AlN substrate with active metal brazing (AMB) technology and a robust reflow-compatible heatsink interface, this package eliminates the need for external TIM and isolation materials from the system stack – delivering superior power cycling capability and enhanced thermal cycling lifetime.
- Industry-Standard Form-Factor and Footprint: Compatible with the established high-voltage TO‑247‑4 form factor and lead geometry, this package allows effortless system integration with no redesign — while delivering superior performance, increased reliability, and lower total system cost.
“High-power system design is fundamentally challenged by the need to balance efficient thermal management with robust high-voltage isolation,” said Paul Wheeler, VP & GM of the SiC Business Unit at Navitas. “The UHV-TO-247-4-ISO package overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor. As a highly efficient building block, it empowers system designers to unlock the full potential of GeneSiC TAP SiC MOSFET technology in next-generation applications such as immersion-cooled and liquid-cooled power electronics.”
Product Portfolio:
The UHV-TO-247-4-ISO package is offered in 3300V, 2300V, and 1200V SiC MOSFET ratings. This packaging breakthrough enables performance improvements in high-voltage grid-tied power conversion systems (PCS), solid-state transformers (SST), battery energy storage systems (BESS), and renewable energy applications.
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Part Number
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VDS
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RDS,ON
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G5R06MT12UIK
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1200 V
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6.5 mΩ
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G5R12MT12UIK
|
1200 V
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12 mΩ
|
|
G4H11MT23UIK
|
2300 V
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11.5 mΩ
|
|
G4H23MT23UIK
|
2300 V
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23 mΩ
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|
G4H22MT33UIK
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3300 V
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22.5 mΩ
|
|
G4H45MT33UIK
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3300 V
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45 mΩ
|
The new package, together with its direct-cooled heatsink assembly, will be available at the Navitas Booth at PCIM Europe 2026, in Nuremberg, booth #544, Hall 9.
To request samples and product collateral, please contact a Navitas Sales Representative or write to info@navitassemi.com.
![](https://www.semiconductorforu.com/wp-content/uploads/2025/03/2020-Battery_KE1010R2-970x250-ROTATING-FINAL-V3.gif")
