Nexperia brings QDPAK packaging to 1200 V SiC MOSFETs to overcome thermal bottlenecks in high-power designs

Top-side cooled SMD package provides a practical route to higher power density and system efficiency while simplifying heatsink and mechanical integration

Nijmegen, June 9, 2026: Nexperia today announced the release of 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Designed for high-efficiency, high-voltage power conversion applications, these devices enable the electrical performance of Nexperia’s SiC technology with simplified thermal management and mechanical integration, enabling higher output power, increased efficiency and improved thermal performance in compact designs.

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Available in both industrial-grade and automotive-qualified variants, the portfolio offers RDS(on) options of 17, 30, 40, 60 and 80 mΩ, delivering a scalable QDPAK platform for applications ranging from high-power systems to compact designs with demanding thermal and mechanical constraints. Complementing Nexperia’s existing package portfolio, QDPAK gives designers greater flexibility to optimize efficiency, power density and thermal performance.

QDPAK packaging addresses a key limitation in high-voltage power conversion systems: heat dissipation through the PCB. By enabling a direct die-to-heatsink thermal path from the top side of the package, these devices reduce reliance on the board as the primary heat-spreading path and allow the semiconductor and PCB thermal domains to be managed more independently. Compared to conventional D2PAK-7 packaging, top-side cooled packages can deliver up to 3 kW higher output power at comparable thermal limits, while also providing around 40 °C additional thermal headroom at the same power level. Building on the existing X.PAK platform, QDPAK further extends power handling capability, enabling operation at approximately 3 kW higher power at comparable case temperatures, while offering around 23 °C additional thermal headroom at similar power levels. Well suited for EV onboard chargers (OBC), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives and datacenter power systems, QDPAK devices help engineers optimize both electrical and mechanical system performance.

“As wide-bandgap technologies continue to reshape power conversion design, the industry is facing a new set of thermal, mechanical and efficiency challenges as systems become smaller, denser and more power hungry,” says Gaetano Pignataro, Head of SiC & IGBT Product Group at Nexperia. “At Nexperia, we are focused on developing solutions that address these real system-level challenges. Our 1200 V SiC MOSFETs in QDPAK combine the performance of our SiC technology with the thermal advantages of top-side cooling, giving engineers a practical and scalable option for next-generation high-power applications.”

Nexperia’s 1200 V SiC MOSFETs in QDPAK leverage the benefits of top-side cooled surface-mount packaging with the electrical characteristics required for efficient high-voltage power conversion. Excellent RDS(on) temperature stability supports predictable conduction losses and reliable operation at elevated junction temperatures, while low-inductance package design and controlled switching behavior support efficient operation. The additional Kelvin source pin enables faster commutation and improved switching control, helping designers manage ringing, EMI and switching transients.

To learn more about Nexperia’s SiC MOSFETs, visit: www.nexperia.com/sic-mosfets